Models | EE- SPY801/802 | |
---|---|---|
Sensing distance (Standard sensing object) |
0 to 5 mm ( White paper: 15 × 15 mm2, reflection factor: 90%) 0 to 3 mm ( Black paper: 15 × 15 mm2, reflection factor: 10%) |
|
Sensing object | Transparent or opaque wafer carriers | |
Operation indicator | Lit orange when object is detected. | |
Light source | GaAs infrared LED with a peak wavelength of 940 nm | |
Supply voltage | 12 to 24 VDC ±10%, ripple (p-p): 5% max. | |
Current consumption | 30 mA max. | |
Control output | NPN open collector: Load power supply voltage: 5 to 24 VDC Load current: 100 mA max. OFF current: 0.5 mA max. 100 mA load current with a residual voltage of 0.8 V max. 40 mA load current with a residual voltage of 0.4 V max. |
|
Response time | 5 ms max. | |
Ambient illumination | 3,000 lx max. with incandescent light or sunlight on the surface of the receiver | |
Ambient temperature range | Operating: - 10 to +55 ° C Storage: - 25 to +65 ° C (with no icing) |
|
Ambient humidity range | Operating: 5% to 85% Storage: 5% to 95% (with no condensation) |
|
Vibration resistance | Destruction: 1 to 500 Hz, 1.0-mm single amplitude or 150 m/s2 each in X, Y, and Z directions 3 times and for 11 min. each |
|
Shock resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions | |
Degree of protection | IEC IP30 | |
Connecting method | Pre-wired (Standard length: 2 m) | |
Weight (packaged) | Sensor: Approx. 43 g; Accessory (Pedestal): Approx. 9 g | |
Material | Case | Ethylene tetrafluoro ethylene (ETFE) |
Base plate | Polybutylene phthalate (PBT) | |
Accessories | Instruction Manual |